Performance limiting surface defects in SiC epitaxial p-n junction diodes

Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n/p-Junction Diode

We demonstrate an abrupt and box-shaped n/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n/p-junction diodes at 400 ◦C–600 ◦C, based on the...

Identification and carrier dynamics of the dominant lifetime limiting defect in n 4H-SiC epitaxial layers

Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

In this work, 4H-SiC epilayers are performed on 4° off-axis substrates under low pressure condition by horizontal hot wall chemical vapor deposition (HWCVD) with a standard chemistry of silane-propane-hydrogen, which focuses on the effects of growth pressure on morphology, basal plane dislocations (BPDs) and crystalline quality. It is found that morphological defects reduce with the decreasing ...

P-n Junction Diode

Chemist, led the research for the molecular diode (In the semiconductor industry, called p-n junctions)

Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures

Three-dimensional (3D) topological insulators are a new state of quantum matter, which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties...